Method of writing, erasing, and controlling memory and memory device having erasing and moving components

ABSTRACT

Data transferred from a host computer to a memory device is written into sectors whose addresses in a memory area are decoded by a decode table. Old data to be updated by the above data is erased or marked with erase flags. At a predetermined point of time, in order to create free areas, necessary data is evacuated to a primary memory media and unnecessary data indicated by erase flags is erased by a unit of predetermined memory size. Part of the memory media which has become defective is marked with a defect flag, and is replaced by an alternate area. In doing so, the decode table is rewritten to rearrange the memory area.

Continuation of prior application Ser. No: 08/292,213, filed Aug. 19,1994 now U.S. Pat. No. 5,802,551.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a method of controlling the writing anderasing of information in flash memories and the like used as anexternal storage device for personal computers. This type of memory isincapable of having information written over existing information.

2. Description of the Prior Art

In recent years, there has been wide attention on external storagedevices which use flash memory. The flash memory does not require abackup power supply because of its non-volatile characteristic, can berewritten electrically, and, also, is inexpensive. However, the flashmemory has shortcomings as follows.

First, it is impossible to write information over existing information.Also, it is impossible to erase information by the unit of byte, butpossible by the unit of sector, block, or chip. Thus, a rewrite can notbe done byte by byte as in the conventional memory so that the rewritingspeed as well as the erasing speed is relatively slow compared to thereading speed.

Second, there is a limit in the number of erasures that the flash memorycan tolerate, and a typical flash memory can not be used after a hundredthousand to one million erasures. Thus, areas which experience a largernumber of erasures become defective faster than other areas so that thetotal area available for storing information decreases unless thenumbers of erasures are roughly averaged across all the sectors or allthe blocks, whichever is used as the unit of erasing.

Since the flash memory has shortcomings as listed above, various countermeasures should be taken in using the flash memory, which are rangingfrom preparing an evacuation area and evacuating data at the time ofrewriting, providing a control table for controlling the writing anderasing of information, to preparing a way to save the situation whendefective sectors or defective blocks are generated.

As described above, the flash memory has such advantages as anon-volatile characteristic and electrical rewrite capability, but alsohas many inadequacies as well, so that those inadequacies must besurmounted before using it for a practical purpose.

Accordingly, there is a need in the flash memory field for a method ofwriting, erasing, and controlling a memory so that those shortcomingsare obviated to facilitate use of flash memory for practical purposes.

SUMMARY OF THE INVENTION

Accordingly, it is a general object of the present invention to providea method of writing, erasing, and controlling a flash memory, whichmethod satisfies the need described above.

It is another and more specific object of the present invention toprovide an efficient method of writing, erasing, and controlling amemory for a memory device whose memory can not write information overexisting information and can not erase information by the unit of byte.

It is yet another object of the present invention to provide a method ofwriting, erasing, and controlling the memory, which method can averagethe numbers of erasures all over the memory area.

In order to achieve those objects, a method of writing and erasing datain a memory device with a memory area having a plurality of blocks eachwith a plurality of sectors, with the memory device erasing data by theunit of one block, comprises the steps of selecting a firstpredetermined number of blocks from a top of a first list in which theblocks are ranked in a descending order of a number of necessary sectorsin each of the blocks, selecting a second predetermined number of blocksfrom a top of a second list in which the blocks are ranked in aascending order of a number of necessary sectors in each of the blocks,and evacuating the necessary sectors from the first predetermined numberof blocks and a second predetermined number of blocks to other blockswhich have free sectors.

It is still another object of the present invention to provide a methodof writing, erasing, and controlling the memory, which method canincrease its writing speed.

In order to achieve this object, a management method of writing data ina memory device with a memory area having a plurality of sectors unableto be overwritten, with a memory device erasing data by the unit of onesector, comprises the steps of providing at least two sectors for eachsector number, writing data into one of the two sectors, the noted onebeing a free sector, and erasing data in the other sector of the twosectors simultaneously with the step of writing data, if there is datain the other sector.

It is a further object of the present invention to provide a method ofwriting, erasing, and controlling the memory, by a method which canincrease the reliability of the memory management.

It is a yet further object of the present invention to provide a methodof writing, erasing, and controlling the memory, by a method which canprovide a counter measure when defective areas are generated.

In order to achieve those objects, a method of managing a memory devicewith a memory area having a possibility that part of the memory area isdestroyed, and having a decoder able to be rewritten for indicatinglocations where data is stored in the memory area, comprises the stepsof arranging two decoders in a series to form the decoder, and rewritingat least one of the two decoders when part of the memory area or part ofthe two decoders is destroyed, so that this part of the memory area orthis part of the two decoders is not accessed.

Other objects and further features of the present invention will beapparent from the following detailed description when read inconjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram showing a structure of a memory device servingas a basis for the present invention;

FIG. 2 is an illustration showing contents of an SRAM of the memorydevice of FIG. 1;

FIGS. 3 to 4 are illustrations showing contents of flash memories of25-1 to 25-5 of the memory device of FIG. 1.

FIGS. 5 to 9 are a flow chart showing a writing process according to thepresent invention;

FIGS. 10A to 10J are illustrative drawings showing an embodiment ofaveraging the numbers of erasures according to the present invention;

FIG. 11 is a flow chart showing a process of averaging the numbers oferasures;

FIGS. 12A to 12L are illustrative drawings showing an embodiment oferasing unnecessary data according to the present invention;

FIG. 13 is a flow chart showing a process of erasing unnecessary data;

FIGS. 14A to 14R are illustrative drawings showing an embodiment ofcreating a free area according to the present invention;

FIG. 15 is a flow chart showing a process of creating a free area;

FIGS. 16A to 16F are illustrative drawings showing an embodiment of aerasing process according to the present invention;

FIG. 17 is a flow chart showing an erasing process;

FIG. 18 is a block diagram of a system structure of an embodiment forenhancing a writing speed according to the present invention;

FIGS. 19A and 19B are illustrative drawings showing a first embodimentof enhancing a writing speed according to the present invention;

FIGS. 20A and 20B are illustrative drawings showing a second embodimentof enhancing a writing speed according to the present invention;

FIGS. 21A and 21B are illustrative drawings showing a third embodimentof enhancing a writing speed according to the present invention;

FIGS. 22A and 22B are illustrative drawings showing a fourth embodimentof enhancing a writing speed according to the present invention;

FIGS. 23A and 23B are illustrative drawings showing a fifth embodimentof enhancing a writing speed according to the present invention;

FIGS. 24A to 24C are a flow chart showing a process of enhancing awriting speed;

FIGS. 25A to 25C are block diagrams showing embodiments of doubling adecoding unit for address conversion according to the present invention;

FIG. 26 is an illustrative drawing used for describing an embodiment ofestimating the length of time required for writing data;

FIG. 27 is a flow chart showing a process of estimating the length oftime required for writing data;

FIGS. 28A to 28C are illustrative drawings showing a first embodiment ofa flag check process;

FIGS. 29A to 29C are illustrative drawings showing a second embodimentof a flag check process;

FIG. 30 is an illustration showing a structure of a memory area for anembodiment of reducing the size of a management table according to thepresent invention; and

FIGS. 31A to 31E are illustrative drawings showing an embodiment ofreducing the size of a management table.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

In the rest of the description, the following topics will be describedin the following order: A. Structure of System Serving as Basis forPresent Invention, B. Writing/Erasing Process for Data Evacuation andFree Area Creation, C. Enhancement of Erasing Process, D. Enhancement ofWriting Speed and Allocation of Backup Areas in Case of Defect Sectors,E. Enhancement of Reliability of Decoding Unit for Address Conversion,F. Process of Estimating Writing Time, G. Enhancement of Reliability ofFlag Check Process, and H. Memory Management Method of Reducing Size ofManagement Table.

A. Structure of System Serving as Basis for Present Invention

FIG. 1 is a block diagram showing the structure of a memory device 20which uses flash memories and serves as a basis of the presentinvention.

In FIG. 1, a memory device 20 such as a memory card comprises a controlLSI (Large Scale Integrated Circuit) 21, a processor 22 for controllingthe rewriting and erasing of data, a SRAM (Static Random Access Memory)23 for storing various types of tables and serving as a data evacuationbuffer at the time of writing data, a clock generator 24, and flashmemories 25-1 to 25-5. The memory device is connected to a hostcomputer.

In FIG. 1, when the data transferred from the host computer to the SRAM23 is written to the flash memories 25-1 to 25-5, the data should bewritten to a vacant area because the flash memories 25-1 to 25-5 can notwrite information over existing information. Thus, such a measure shouldbe taken as putting up an erase flag on old data whose new data has beenwritten into a vacant area. When erase flags are used, contents of thememory are cleaned up and put in order by evacuating data having noerase flags to the evacuation area of the SRAM 23 by the unit of apredetermined size, erasing the areas of the memory to which data is tobe written, and writing the evacuated data back to the memory.

FIG. 2 shows memory contents of the SRAM 23. As shown in FIG. 2, datastored in the SRAM 23 are as follows;

(1) Table for Erasing Times

This holds the number of erasures for each block of the flash memory.

(2) Table for Number of Erasable Sectors

This holds the number of erase flags (i.e., the number of erasablesectors) for each block.

(3) Write Pointer

This holds the chip No., the block No. and the sector address No. of thestarting point to write data into the flash memory.

(4) Work Block No.

This holds the chip No. and the block No. indicating the currentwork-block No.

(5) Cleaning Up Pointer

This holds the chip No., the block No., and the sector address No. ofthe place which is being cleaned up.

(6) Rewrite Flag

This shows whether the data to be written is brand-new or replacing acorresponding old data.

(7) Number of Writing Times

This holds the number of times that writing is carried out during thetime of cleaning up.

(8) Evacuation Counter

This holds the number of sectors evacuated at the time of cleaning up.

(9) Number of Chips

This holds the number of the flash chips in the memory card.

(10) Sector Map Table

This holds chip numbers, block numbers, and sector address numbers forlogical address conversion.

FIGS. 3 and 4 show memory contents of the flash memory 25-1 to 25-5,whose each sector stores the management information and data shown inthe followings as (1) through (5). In this example, there are 126sectors, each of which stores the management information and data of (1)through (5), and, also, the management information of (6) through (14)is stored in the area entailing the 126th sector.

(1) Defect Flag

This shows the status of the sector, and is marked when the sectorbecomes defective and cannot be used any more.

(2) Erase Flag

This shows the data status of the sector, and is marked when data of thesector becomes obsolete, for example, after a rewrite.

(3) Logical Address

This shows the logical address of the sector.

(4) Data

This holds data of the sector.

(5) Check Sum

This holds the check sum of data written in the sector.

(6) Defective Sector Memory

This shows defective sectors of the block in the process of beingcleaned up.

(7) Cleaning Up Target Block Erasing Times

This shows how many times the block in the process of being cleaned upis erased at the time of cleaning up.

(8) Erasing Times

This shows how many times the block is erased.

(9) Evacuation Block No.

This holds the chip No. and the block No. of the block whose data isevacuated.

(10) Start Erasing

This flag is marked at the beginning of erasing the block in the processof being cleaned up.

(11) End erasing

This flag is marked at the end of erasing the block in the process ofbeing cleaned up.

(12) All Erase Target

This flag is marked when this block is the target of "all erase".

(13) Free Block

This flag is marked when there is data in the block.

(14) Block Status

This shows the status of the block, and is marked when the block becomesdefective and cannot be used any more.

FIGS. 5 to 10 are a flow chart of a process of the processor 22 inwriting data to the flash memories 25-1 to 25-5. With reference to FIGS.5 to 10, the writing operation will be described in detail.

At a step S1 of FIG. 5, Rewrite Flag of the SRAM 23 which shows the datato be written is brand-new or replacing the old data is set to 0. At astep S2, it is determined whether cleaning up is underway. If it is not,go to a step S5, where Number of Writing Times of the SRAM 23 showingthe number of times that writing is carried out during the time ofcleaning up is set to 0, and, then, a step S7 is the next step toproceed.

If cleaning up is underway, go to a step S3, where Number of WritingTimes is added 1. At a step S4, a check is made if Number of WritingTimes is equal to 6. If it is 6, go to a step S6, where Number ofWriting Times is set to 1. If it is not 6, go to the step S7.

The process described above makes sure that cleaning up is not carriedout when Number of Writing Times is from 2 to 5, but is carried out onlywhen Number of Writing Times is 1, so that cleaning up occurs after fivetimes writing data to the flash memory to avoid excessive occurrence ofcleaning up.

At the step S7, a check is made whether the logical address of the datato be written exceeds its limit, and if it does, error handling shouldbe carried out.

If the logical address does not exceed its limit, go to a step S8, wherea check is made if there is old data, i.e., if the data to be written isbrand-new or replacing the old data. If it is not brand-new, the RewriteFlag of the SRAM 23 is set to 1 at a step S9, and, then, a step S11 isthe next step to proceed. If the data to be written is. brand-new, theRewrite Flag of the SRAM 23 is set to 0 at a step S10, and, then, thestep S11 is the next step to proceed.

At the step S11, data is transferred from the host computer to the SRAM23, and a check is made at a step S12 whether an error occurred duringthe transfer. If it did, error handling must be carried out. If there isno error, go to a step S13 of FIG. 6, where Rewrite Flag is checked tosee if the data to be written is brand-new. If it is not brand-new,i.e., the data is to be rewritten, Erase Flag is marked at the sectorholding the old data at a step S14, and, then, a step S15 is the nextstep to proceed.

At the step S15, a check is made whether Number of Writing Times of theSRAM 23 is 1. If it is 1, the flash memory is cleaned up at the stepsfollowing the step S15. If Number of Writing Times is not 1, go to astep S46 of FIG. 9 and the data stored in the SRAM 23 is written intothe flash memory.

At a step S16, Evacuation Counter of the SRAM 23, which holds the numberof sectors evacuated at the time of cleaning up, is set to 0. At a stepS17, a check is made whether a Cleaning Up Pointer indicating theaddress of the sector being cleaned up is smaller than 126. If it is notsmaller than 126, cleaning up is finished, and a step S38 of FIG. 8 isthe next step to proceed. If Cleaning Up Pointer is smaller than 126,proceed to a step S18, where a check is made if Cleaning Up Pointer is0. If it is not 0, go to a step S22.

If Cleaning Up Pointer is 0, the target of cleaning up is selected byusing the numbers of erasures and erasable sectors of each blockobtained from the tables of the SRAM 23. At a step 20, the chip No. andthe block No. of the target of cleaning up is written into EvacuationBlock No. of the Work Block in the flash memory.

At a step S21, a check is made if there occurred an error in writing thechip No. and the block No., and if it did, error handling must becarried out. If there occurred no errors, go to the step S22.

At the step S22, a search is made for data to be evacuated. That is, ifErase Flag of the current sector is marked, go to the next sector. Ifthere is no logical address written, Erase Flag is marked at the currentsector, and the next vector is the next to search for. If the logicaladdress is anomalous, Erase Flag and Defect Flag are both marked, andthe next sector is the next to search for.

At a step S23 of FIG. 7, a check is made whether there has been anerror. If not, it is checked whether Cleaning Up Pointer indicates the126th sector, and if it does, cleaning up is finished, and a step S38 ofFIG. 8 is the next step to go.

If Cleaning Up Pointer is not 126, proceed to a step S25, where data tobe evacuated is moved from the flash memory to the SRAM 23. At a stepS26, it is checked whether the check sum generated corresponds to CheckSum of the sector in the flash memory (refer to FIG. 3). If it does notcorrespond, a check is made at a step S27 whether the check sum is FFh.

If the check sum is not FFh, Check Sum is set to FFh and Defect Flag ismarked at a step S28 for the sector of the data attempted to beevacuated, and, a step S29 is the next step to proceed. At the step S29,a check is made if there occurred an error, and if not, proceed to astep S30.

If the check sum corresponds to Check Sum at the step S26 or turns outto be FFh at the step S27, go to the step S30. At the step S30, a searchfor a write-enable sector is started from the sector indicated by WritePointer. Then, at a step S31, it is checked whether there is awrite-enable sector. If there is not, error handling must be carriedout. If there is a write-enable sector, go to a step S32, where the datastored in the SRAM 23 is moved to the flash memory.

At a step S33, a check is made whether an error occurred in writing thedata, and if it did, go back to the step S30. If no errors occurred, goto a step S34 of FIG. 8, where Erase Flag of the sector whose data hasbeen evacuated is marked.

At a step S35, a check is made whether an error occurred in writingErase Flag. If no error occurred, Sector Map Table is updated at a stepS36, and Evacuation Counter is incremented by 1 in the SRAM 23.

Then, at the step S37, it is checked whether evacuation has occurred apredetermined number of times (60 times in the preferred embodiment). Ifit did, stop the cleaning up of the flash memory to go to the step S38.If the number of times of evacuation is less than 60, go back to thestep S22 of FIG. 6 to repeat the process described above.

If Evacuation Counter is 60 or Cleaning Up Counter turns out to be noless than 126 at the step S17 of FIG. 6, a check is made at the step S38whether Evacuation Counter is 0.

If Evacuation Counter is 0, i.e., if Cleaning Up Counter is no less than126 and there has been no evacuation, go to a step S39, and processeslike writing Defect Flags to defective sector memories are carried outat the successive steps starting from the step S39.

In other words, if Evacuation Counter is 0, it means that the processingtime was short enough to carry out pending processing, so that processeslike writing Defect Flags to defective sector memories are carried outat the steps starting with S38. If Evacuation Counter is not 0, go to astep S46 of FIG. 9. Moving the data in the SRAM 23 to the flash memoryand following processes are carried out from that point.

At the step S39, information on Defect Flags of the evacuated block iswritten into Defect Sector Memory (FIG. 4) and Erasing Times of theevacuated block is written into Cleaning Up Target Block Erasing Times(FIG. 4) both at the block of the evacuation destination (Work-Block).At a step S40, a check is made whether an error occurred in writingthose. If no error occurred, go to a step S41, where the cleaned upblock is erased. At a step S42, a check is made whether an erroroccurred in erasing the block, and if there is no errors, go to a stepS43 of FIG. 9, where information on Defect Flags stored in Defect SectorMemory is written back to the erased block and Cleaning Up Target BlockErasing Times plus one is written into Erasing Times of the erasedblock.

At a step S44, the number of erasures of the erased block is incrementedby 1 in Table for Erasing Times, and the number of erasable sectors isset to 0 in Table for Number of Erasable Sectors. At a step S45,Cleaning Up Pointer is copied to Work Block No., and, then, set to 0.

Then, at the step S46, a search for a write-enable sector is startedfrom the sector indicated by Write Pointer. At a step S47, a check ismade whether there is a write-enable sector. If there is, go to a stepS48, where the data stored in the SRAM 23 is moved to the flash memory.At a step S49, it is checked if an error occurred in writing the data.

If an error occurred, go back to the step S46, and if it did not, go toa step S50. At the step S50, a check is made whether Rewrite Flag is 1,i.e., whether the data written is brand-new. If Rewrite Flag is 1, anumber in Table for Number of Erasable Sectors (FIG. 2) is added 1 at astep S51 for each sector into which Erase Flag was written. The step S52is the next step to proceed.

In the case that Rewrite Flag turns out to be 0 at the step S50, SectorMap Table (FIG. 2) is updated at the step 52, and a search is made for awrite-enable sector by starting from the sector indicated by WritePointer in preparation for the next writing process. This is the end ofthe process.

B. Writing/Erasing Process for Data Evacuation and Free Area Creation

As described above, the flash memory has a limit in the number of timesthat erasing can be carried out, so that the numbers of erasures need tobe averaged across the memory area for an effective use of the entirememory.

Also, it is not possible to write data over existing data so that datafor rewrite needs to be written into new sectors while the old data ismarked by flags and the like so as to be erased later at a convenienttime.

Thus, it is necessary to set aside free memory areas for new data to bewritten by erasing old erasable data in the memory. Also, when the freeareas become dysfunctional due to defective blocks and the like, it isnecessary to take a counter measure to create new free areas.

The the processing of memory areas according to preferred embodiments ofthe present invention will be described, such as, the averaging of thenumber of erasures (first embodiment), the creation of free areas byerasing erasable data (second embodiment), and a counter measure forcreating free areas in the case of defective blocks (third embodiment).

(1) First Embodiment (Averaging of Number of Erasing Times)

As described above, the flash memory has a limit in the number of timesthat erasing can be carried out, so that the numbers of erasures need tobe averaged across the memory area for an effective use of the entirememory.

This embodiment shows a method that can reduce a variation in thenumbers of erasures across the memory area without explicitly takinginto account those numbers. In this embodiment, with a memory in whichwriting can be done by the unit of sector and erasing can be done by theunit of block, the numbers of erasures can be averaged over by movingsectors to new blocks from blocks with a relatively large number oferasable sectors and blocks with a relatively small number of erasablesectors.

This embodiment will be described in the following.

FIGS. 10A to 10J show a writing process of this embodiment and anexample of writing logical sectors A to O into a flash memory which hassix blocks each with six sectors.

Also, in the following description, M blocks (2 in this embodiment) areevacuated when a number of blocks having free sectors becomes N (2 inthis embodiment), and m block in a descending order of the number oferasable sectors (1 block in this embodiment) and n block in a ascendingorder of the number of erasable sectors (1 block in this embodiment) areselected and evacuated simultaneously.

In evacuating blocks, as described above, sectors with no Erase Flagattached are moved to the SRAM 23 of FIG. 1, and, then, are moved fromthe SRAM 23 to new blocks.

In FIG. 10A, sectors A, B, C, D, E, F, G, H, and I are written intoblocks 1 and 2 successively by starting from the first sector.

In FIG. 10B, the sectors C and D are written again. Since the samesectors C and D already exist, Erase Flags are marked at the existingsector C and D, and the new sector C and D are written into the placesfollowing the sector I.

Then, in FIG. 10C, sectors J, K, L, M, N, and O are written into theblocks 3 and 4. Since there are no existing sectors identical to thesectors to be newly written, those sectors are written into the placesfollowing the last written sector.

In FIG. 10D, sectors H, I, J, K, L, M, and N are written. Since thereexist the identical sectors, Erase Flags are marked, and the new sectorsH, I, J, K, L, M, and N are written into the places following the lastentry.

In FIG. 10E and 10F, the sectors C and D are written again. At thistime, however, as the number of free blocks is 2, an evacuation processhas to take place.

For evacuation, two blocks are selected which are the block 3 with thelargest number of erasable sectors and the block 4 with the smallestnumber of erasable sectors, and the sectors of those two blocks aremixed and written into the free blocks 5 and 6 in such a way that thesectors are distributed evenly in each destination block.

As a result, as shown in FIG. 10F, the sector O, I, K, and M are writteninto the block 5, and the sector H, J, L, and N in the block 6, whichfrees the block 3 and 4.

In FIG. 10F, the sector C and D are written into the block 5 afterputting up Erase Flags in the block 2 of the existing sectors C and D.

In FIG. 10G, sectors H, I, and J are written. As in the previous cases,Erase Flags are marked in the blocks 5 and 6 since there are existingsectors identical to the sectors to be newly written. The sectors H andI are first written into the block 6, but only two free blocks are leftat this point of time so that an evacuation process has to take placeagain.

As shown in FIG. 10H, two blocks are selected which are the block 2 withthe largest number of erasable sectors and the block 6 with the smallestnumber of erasable sectors, and the sectors of those two blocks aremixed and written into the free blocks 3 and 4 in such a way that thesectors are distributed evenly in each destination block.

Then, as shown in FIG. 10I, the sector J is written. Since there is anexisting identical sector again, Erase Flag is marked in the block 4 ofthe existing sector J, and the new sector J is written into the block 3.

In FIG. 10J, sectors E, F, and G are written. As in the previous cases,there are identical sectors so that Erase Flags are put up in the block1 and 3. Then, the sector E, F, and G are written into the block 3 and4.

FIG. 11 is a flow chart of the process of this embodiment, which will bedescribed below.

At a step S1, data is received from the host computer. At a step S2, acheck is made whether the number of blocks having at least one freesector is less than N. If it is not less than N, go to a step S7. If itis less than N, m blocks are selected as an evacuee at a step S3 in adescending order of the number of erasable sectors, and n blocks arealso selected as an evacuee at a step S4 in an ascending order of thenumber of erasable sectors.

At a step S5, data in the evacuee blocks are moved to free blocks. Adifferent block is selected as a destination block each time one sectoris written, and the M blocks form each rotation for M sectors so thatthe M+1th sector is written into the first block of the second rotation.At a step S6, the blocks which are evacuated are erased.

At the step S7, if there are existing logical sectors identical to thelogical sectors to be newly written, Erase Flags are marked at the oldidentical sectors. At a step S8, data received from the host computer iswritten into the flash memory.

In general, there are sectors storing such data which are rarelyrewritten as data for system programs, and sectors storing data whichare often rewritten. Thus, data evacuation without taking this intoaccount may lead to that the blocks with sectors rarely rewritten end uphaving a small number of erasures.

In this embodiment, as described above, blocks with a large number oferasable sectors (i.e., blocks with a large number of sectors oftenrewritten) and blocks with a small number of erasable sectors (i.e.,blocks with a large number of sectors rarely rewritten) are selected forevacuation, and the sectors from those blocks are mixed to bedistributed to new blocks. This results in that each block has a mixtureof sectors often rewritten and sectors rarely rewritten so that thenumbers of erasures across blocks can be averaged over.

This embodiment carries out a writing process by using the methoddescribed above so that a variation in the numbers of erasures acrossthe memory area can be reduced without explicitly taking into accountthose numbers, which leads to a longer life of such memories as theflash memory having a limited number of tolerable erasures. Also, sincea variation in the numbers of erasures can be reduced without countingthose numbers, it is possible to manage the memory space without settingaside a memory area for a counting use.

(2) Second Embodiment (Creation of Free Areas by Erasing Erasable Data)

As described above, flash memories cannot write data over existing databefore erasing the existing data. Thus, it is required to mark EraseFlags at the existing identical sectors, which should be erased later onat a time of convenience.

This embodiment shows area processing for erasing out erasable data withErase Flags from a memory. This area processing can be carried outduring a free time interval among other processes so that free areas canbe set aside beforehand to reduce the processing time required forwriting.

FIGS. 12A to 12L show a writing/erasing process of this embodiment,which will be described below. First of all, this embodiment has thefollowing as its basis.

1. There are six blocks each with six sectors. Reading/writing iscarried out by the unit of sector and erasing by unit of block.

2. The method of writing is of add-on writing, i.e., when writing alogical sector having the same address as that of logical sectorexisting in the memory, the physical sector of the existing logicalsector is marked with Erase Flag.

3. The area for add-on writing is 5 blocks plus an evacuation area block(blocks 1 through 6).

4. When there are no more writing areas, data in the unerasable physicalsectors of the block which has the largest number of physical sectorswith Erase Flags are moved to an evacuation area, and this block iserased. Then, the block just erased is used as an evacuation area block,and the previous evacuation area is in turn used as a writing area.(This whole process is called evacuation process.)

5. The addresses of the sectors sent from the host computer are Athrough N.

6. When there are more than m erasable sectors in a block, this block isthe target of area processing of this embodiment.

In FIGS. 12A to 12L, an arrow shown to the left of a block shows thelocation of Write Pointer indicating the point of writing data.

In FIG. 12A, logical sectors A through G are written. Since there are noidentical logical sectors, the logical sectors A through G are writteninto the points successively indicated by Write Pointer. In FIG. 12A,after writing the logical sectors A through G, Write Pointer indicatesthe sector following the last entry of the logical sector G.

In FIG. 12B, the logical sectors A and D through G are written. Sincethere exist the identical logical sectors A, D, E, F, and G, the logicalsectors A and D through G are written in the same manner as in FIG. 12Aafter putting up Erase Flags at those identical logical sectors.

In FIG. 12C, logical sectors H through N are written. Since there are noidentical logical sectors, the logical sectors H through N are writteninto the points successively indicated by Write Pointer without takingany other action.

In FIG. 12D, the logical sectors A and G through L are written. Sincethere exist the identical logical sectors A, G, H, I, J, K, and L, thelogical sectors A and G through L are written after putting up EraseFlags at those identical logical sectors.

In FIG. 12E, the logical sectors A and H through J are written. Sincethere exist the identical logical sectors A, H, I, and J, the logicalsectors A and H through J are written after putting up Erase Flags atthose identical logical sectors.

In FIG. 12F, it is attempted to write the logical sectors A and Ithrough L. Since there are no writing areas left, however, an evacuationprocess has to take place. That is, data in the block with the largestnumber of physical sectors with Erase Flag (block 3) are moved to theevacuation area block (block 6), and the block 3 which has just beenevacuated is erased. Then, the block 3 is used as an evacuation area,and the previous evacuation area (block 6) is newly used as a writingarea.

FIG. 12F shows the result of the above described process.

Then, as shown in FIG. 12G, the logical sectors A and I through L arewritten. Since there exist the identical logical sectors A, I, J, K, andL, the logical sectors A and I through L are written after putting upErase Flags at those identical logical sectors. At this point of time,Write Pointer indicates the first sector of the evacuation area block(block 3).

As a result of the process described above, there are many erasablesectors so that the evacuation processing of this embodiment is carriedout.

First, by taking as a target the block (block 2) which is locatedimmediately before the evacuation area (block 3) in the writingdirection, an evacuation process is carried out between the blocks 2 and3. As a result, as shown in FIG. 12H, the block 2 becomes an evacuationarea, and the block 3 has unerasable data transferred from the block 2.

Then, an evacuation process is carried out between the blocks 1 and 2 inthe same manner as above. As a result, as shown in FIG. 12I, the block 1becomes an evacuation area, and the block 2 has unerasable datatransferred from the block 1.

Furthermore, an evacuation process is carried out between the blocks 5and 1 in the same manner as above. As a result, as shown in FIG. 12J,the block 5 becomes an evacuation area, and the block 1 has unerasabledata transferred from the block 5. Here, the block 6 is not a target ofarea processing since the block 6 does not have erasable data.

Similarly, an evacuation process also is carried out between the blocks4 and 5 in the same manner as above. As a result, as shown in FIG. 12K,the block 4 becomes an evacuation area, and the block 5 has unerasabledata transferred from the block 4. At this point, the location of theevacuation area has reached the location of the initial evacuation areaso that the process is finished.

With the process described above, erasable data is all deleted from thememory space.

When writing the logical sectors A and H through J, as shown in FIG.12L, those sectors are written in the same manner as before afterputting up Erase Flags since there are identical sectors.

FIG. 13 shows a flow chart of a process of this second embodiment, whichwill be described below.

At a step S1, the block No. of the current evacuation area is stored ina memory. At a step S2, the current evacuation area is pointed to as atarget. At a step S3, a new target is pointed to by going backward byone block in a writing direction.

At a step S4, a comparison is made between the target block and theblock No. stored in the memory at the step S1. If they are the same,this is the end of the process.

If these two blocks are different, go to a step S5, where a comparisonis made between the number of erasable sectors of the target block and apredetermined number m. If the number of the erasable sectors is no morethan m, go back to the step S3 and repeat the above process. If thenumber of the erasable sectors is more than m, go to a step S6, wherethe target is selected as an evacuee. Then, at a step S7, Write Pointeris moved to the first sector of the evacuation area.

At a step S8, data of the evacuee is moved to the evacuation area. At astep S9, the evacuee block is erased. At a step S10, the evacuee. blockis assigned to a new evacuation area. Then, go to the step S3 to repeatthe process.

In this embodiment, area processing described above can eliminate allthe erasable data. Thus, performing this area processing beforehand canreduce the time required for the writing process.

Also, since the target is selected so as to move backward in a writingdirection, all the free space exists between the evacuation area andWrite Pointer indicating the point of writing data. Thus, no matter whenthe process is terminated, it is possible to write data from the pointindicated by Write Pointer. Also, the procedure required to take care ofa situation after the termination of the process can be made minimum,and the termination of the process without going all the way does notbecome a problem.

(3) Third Embodiment (Counter Measure for Creating Free Areas)

As described above, the flash memory needs a free area in the memoryspace for writing data. This embodiment shows a counter measure forcreating free areas, when free areas prepared before become unable to beused any more due to defective blocks and the like.

FIGS. 14A to 14R show a process of creating free areas according to thisthird embodiment of the present invention, and this embodiment will bedescribed by using FIGS. 14A to 14R. First of all, this embodiment hasthe following as its basis.

1. There are seven blocks each with six sectors. Reading/writing iscarried out by the unit of sector, and erasing by the unit of block.

2. The method of writing is of add-on writing, i.e., when writing alogical sector having the same address as that of logical sectorexisting in the memory, the physical sector of the existing logicalsector is marked with Erase Flag.

3. One block is set aside as a backup area (block 0) in case of amalfunction. The area for add-on writing is 5 blocks plus a evacuationarea block (blocks 1 through 6).

4. When there are no writing areas any more, data in the unerasablephysical sectors of the block which has the largest number of physicalsectors with Erase Flags attached are moved to an evacuation area, andthis block is erased. Then, the block just erased is used as anevacuation area block, and the previous evacuation area is in turn usedas a writing area. (This whole process is called evacuation process.)

5. The addresses of sectors sent from the host computer are A through P.

In FIG. 14A, sectors A through G are written. Since there are noidentical logical sectors, the logical sectors A through G are writtenwithout taking any other action.

In FIG. 14B, the logical sectors A and D through G are written. Sincethere exist the identical logical sectors A, D, E, F, and G, the logicalsectors A and D through G are written after putting up Erase Flags atthose identical logical sectors.

In FIG. 14C, logical sectors H through N are written. Since there are noidentical logical sectors, the logical sectors H through N are writtenwithout taking any other action.

In FIG. 14D, the logical sectors A and G through L are written. Sincethere exist the identical logical sectors A, G, H, I, J, K, and L, thelogical sectors A and G through L are written after putting up EraseFlags at those identical logical sectors.

In FIG. 14E, the logical sectors A and H through J are written. Sincethere exist the identical logical sectors A, H, I, and J, the logicalsectors A and H through J are written after putting up Erase Flags atthose identical logical sectors.

In FIG. 14F, it is attempted to write the logical sectors A and Ithrough L. Since there are no writing areas left, however, an evacuationprocess has to be carried out. That is, unerasable data in the blockwith the largest number of data with Erase Flags (block 3) are moved tothe evacuation area block (block 6), and the block 3 which has been justevacuated is erased. Then, the block 3 is used as an evacuation area,and the previous evacuation area (block 6) is newly used as a writingarea.

Then, in FIG. 14G, the logical sectors A and I through L are writteninto the block 6.

In FIG. 14H, it is attempted to write the logical sectors A, M, and N.Since there are no writing areas left, however, an evacuation processhas to be carried out. That is, unerasable data in the block with thelargest number of data with Erase Flags (block 5) are moved to theevacuation area block (block 3), and the block 5 which has been justevacuated is erased. Then, the block 5 is used as an evacuation area,and the previous evacuation area (block 3) is newly used as a writingarea.

At this point, assume that the block 5 becomes unable to be used anymore due to a failure of erasing the block 5. There are no evacuationareas in this case, so that a counter measure has to be taken.

As shown in FIG. 14I, an evacuation process is carried out by taking thebackup block 0 as an acting evacuation area. That is, unerasable data inthe block with the largest number of erasable data in FIG. 14H (block 1)are moved to the acting evacuation area block (block 0), and the block 1which has been just evacuated is erased. Then, the block 1 is used as anevacuation area. Then, as shown in FIG. 14J, the backup block (block 0)is evacuated. That is, the logical sectors B and C of the backup area(block 0) used as an acting evacuation area are moved to the block 3.

Through the above process, a backup area and an evacuation area arecreated, and the logical sectors A, M, and N are written into the block3 as shown in FIG. 14K.

Then, it is attempted to write the logical sectors A, G, H, O, and P.Since there are no writing areas left, however, an evacuation process iscarried out as shown in FIG. 14L. That is, unerasable data in the blockwith the largest number of erasable data (block 4) are moved to theevacuation area block (block 1), and the block 4 which has been justevacuated is erased. Then, the block 4 is used as an evacuation area.

In FIG. 14M, the logical sectors A, G, H, O, and P are written. Sincethere exist the identical sectors A, G, and H, the logical sectors A, G,and H are written into the block 1 after putting up Erase Flags. Thelogical sectors O and P are just written into the block 1 without doinganything else.

Then, in FIG. 14N, writing the logical sector A is attempted. Sincethere are no writing areas left, an evacuation process is carried out.As a result, the block 2 becomes a new evacuation area, and the sectorsD, E, and F in the block 2 are moved to the block 4.

If the block 2 then becomes unable to be used any more due to a failureof erasing the block, no evacuation area is left so that the countermeasure same as before is taken. That is, data in the block with thelargest number of erasable data (block 3) are moved to the actingevacuation area block (block 0), and the block 3 which has been justevacuated is erased. Then, the block 3 is used as an evacuation area.FIG. 14O shows the result of this.

Should this ongoing process be stopped at this point of time due to apower failure and the like, the host computer upon the restart of theprocess can conclude that this process was on the way to creating a freearea since there is some data but no erasable sectors in the backuparea.

As continuation of the process, a counter measure to create free areasis taken so that the sectors I and J of the block 6 are moved to thebackup area (block 0), and the sectors K and L of the block 6 are movedto the block 3. FIG. 14P shows the result of this action.

At this point, the number of free sectors other than the sectors of theevacuation area has become larger than the number of data in the backuparea (block 0), a search is made for a free sector by moving WritePointer from the last sector of the evacuation area. Then, the data ofthe backup area (block 0) are moved to the free areas found by thesearch.

In case that this ongoing process is stopped due to a power failure andthe like at the moment when the sectors B, C, M, and N of the backuparea (block 0) are moved to the block 3 as shown in FIG. 14Q, the hostcomputer upon the restart of the process can conclude that the processof creating a free block is at the step of moving data out of the backuparea since there are some erasable data left therein.

As a continuation of the process, the logical sector I and J of thebackup area (block 0) are moved to the block 4 in FIG. 14R. This is theend of the process.

FIG. 15 shows a flow chart of the process of creating free areasaccording to the second embodiment of the present invention. The processof the second embodiment will be described below by using this flowchart.

At a step S1, a check is made whether there are erasable sectors in thebackup area, and if there are, go to a step S11. If there are noerasable sectors, go to a step S2, where Write Pointer is located at thefirst sector of the backup area. At a step S3, then, a check is made ifthere is data in the backup area. If there is data, go to a step S10,and if there is no data, proceed to a step S4, where the backup area isassigned to the evacuation area.

At a step S5, a check is made whether there are no erasable sectors inall the blocks. If there are no erasable sectors, free areas cannot becreated so that the process is aborted at the step S5. If there areerasable sectors, proceed to a step S6, where the block with the largestnumber of erasable sectors is selected as an evacuee. At a step S7, datain the block of the evacuee are moved to the backup area serving as theevacuation area.

At a step S8, the block of the evacuee is erased, and at a step S9, theblock of the evacuee is in turn newly assigned to the evacuation area.

At the step S10, a check is made whether the number of data in thebackup area is larger than the number of free sectors outside theevacuation area. If it is larger, go back to the step S5 to repeat theabove process. If the number of data in the backup area is not larger,proceed to a step S11, where a free sector is searched for by movingWrite Flag in the writing direction starting from the next sector of theevacuation area. At a step S12, data in the backup area are moved to thefree sectors found at the step S11. At a step S13, the backup area iserased. This is the end of the process.

In this embodiment, free areas are created as described above. Thus,even if some blocks become unable to be used in the memory space, acounter measure can be taken to create a free area. This prevents thememory device from stopping to function in such a case.

Also, even if the process is terminated during processing due to a powerfailure and the like, it is easy to decide at what step the process wasterminated so that this decision making process can be simplified.

C. Enhancement of Erasing Process

As described above, flash memories cannot write data over existing databefore erasing the existing data. This embodiment shows a method thatcan perform an efficient erasing process for erasing the entire memoryspace and that can restart the erasing process in the case of processtermination by providing both Write Flag for indicating that there iswritten data and Executing Flag for indicating that an erasing processfor erasing the entire memory space is underway.

With reference to FIGS. 16A and 16F, the process of this embodiment willbe described below. In this embodiment, there are six blocks, where eachblock is provided with an area for storing Write Flag and the block 6 isprovided with an area for storing Executing Flag indicating that anentire space erasing process is underway.

In FIG. 16A, the blocks 1, 2, and 4 have Write Flags which were writteninto the block 1, 2, and 4 at the time of writing data into thoseblocks.

Then, before starting the initialization process of erasing the entirememory space, Executing Flag is written into the block 6 as shown inFIG. 16B.

In FIG. 16C, the block 1 which has Write Flag is erased, and Write Flagis deleted also.

In FIG. 16D, the block 2 which has Write Flag is erased, and Write Flagis deleted also.

Even if the process moves to a stop sequence by some reason and, then,is restarted later on, it can be concluded straightaway that aninitialization process is underway since there is Executing Flag writtenin the block 6. Thus, the initialization process can be resumed.

In FIG. 16E, since there are no Write Flags written in the block 1, 2,and 3, the block 4 is erased and the Write Flag thereof is deleted also.

In FIG. 16F, since there are no Write Flags written in the block 1through 5, the block 6 is erased to delete Executing Flag thereof.

FIG. 17 shows a flow chart of this embodiment, which will be describedbelow.

At a step S1, a check is made whether there is Executing Flag, and ifthere is, go to a step S3. if there is no Executing Flag, Executing Flagis written into the last block to be processed.

At the step S3, the process target is cleared. At a step S4, a check ismade whether Write Flag is set in the process target block. If it is notset, go to a step S6, and if it is set, go to a step S5 to erase theprocess target block. At the step S6, the process target is proceeded tothe next block.

At a step S7, it is checked if Executing Flag is set, and if it is set,go back to the step S4 to repeat the above process. If no Executing Flagis set, end the process.

Since Write Flag is provided as described above in this embodiment,unnecessary erasing can be avoided, which leads to a shorter processingtime and a longer life of the memory media.

Also, Executing Flag is provided to indicate that the initializationprocess is underway, so that an unexpected termination of the processcan be handled.

D. Enhancement of Writing Speed and Allocation of Backup Areas in Caseof Defective Sectors

As described above, flash memories cannot write data over existing databefore erasing the existing data. Thus, it is necessary to mark sectorswith Erase Flags when there are identical sectors and to erase sectorsmarked with Erase Flags later on at a time of convenience. This meansthat a writing process takes a relatively long time.

Also, the flash memory has a limit in the number of erasures, and cannotbe erased anymore after experiencing erasing this limiting number oftimes. Thus, when there occurred defective sectors, it is required thata counter measure be taken by allocating backup areas.

This embodiment which will be described below shows a method ofassigning backup areas in the case of defective sectors and enhancingthe memory writing speed by eliminating the time lag at the time ofwriting in the memory to which data cannot be written over existing dataand cannot be erased by the unit of sector.

FIG. 18 shows a block diagram showing the structure of a systemaccording to this embodiment. The system of FIG. 18 differs from thesystem of FIG. 1 only in an additional EEPROM 26. The EEPROM 26 containsa decoding table for address conversion. When part of the flash memorybecomes defective, a counter measure is taken by rewriting the EEPROM26. In FIG. 18, the EEPROM 26 is used for storing a decoding table, butany memories capable of rewrite, e.g., the flash memory, can be used forthat purpose.

(1) First Embodiment

FIGS. 19A and 19B show block diagrams of a system according to a firstembodiment. In FIG. 19A, a sector conversion unit 261 includes theEEPROM 26 (or ROM capable of rewrite, e.g., a flash memory). A flashmemory 25 includes a first area A, a second area B, and a backup area C.The first area A and the second area B are provided with four sectors 1through 4.

In FIG. 19A, when writing data into the sector 1, a check is made on thefirst area A and the second area B. If the first area A already hasother data therein, the data is written into the second area B. At thesame time, the sector 1-A of the first area A is erased.

If an error occurred in writing the data, a sector of the backup area Cis used as an alternate sector.

That is, ROM in the sector conversion unit 261 is rewritten in order touse a sector of the backup area C substituting for the sector 1-A of thefirst area A, which had an error in writing the data. The result isshown in FIG. 19B, where one sector of the backup area C is allocatedfor the sector 1-A.

As described above, when errors occur, sectors of the backup area areallocated as long as there remain sectors in the backup area. When thereare no more sectors in the backup area, all the data in the flash memory25 are evacuated to external areas like the SRAM 23 of FIG. 18. The ROMin the sector conversion unit 261 are rewritten to divide an availablespace into a data space and a backup space. By excluding defectivesectors, sectors are allocated successively in a descending order or anascending order of the address depending on the type of the system.

In this embodiment, the writing and erasing of data can be performedsimultaneously so that the time lag at the time of writing can beeliminated and a writing speed can be increased. Also, since backupareas are provided to substitute for defective sectors, the developmentof defective sectors is not a problem.

(2) Second Embodiment

FIGS. 20A and 20B are block diagrams of a system according to a secondembodiment. In FIG. 20A, a sector conversion unit 261 includes an EEPROMor other ROM capable of rewrite, e.g., a flash memory. A flash memory 25includes a first area A and a backup area C. The first area A isprovided with four sectors 1 through 4. A primary memory media 23 is theSRAM 23 of FIG. 18 and the like.

In FIG. 20A, while data is being transferred to the primary memory media231, a check is made on a sector into which the data is to be written.If the sector already has data, the sector is erased. If the transfer ofthe data is completed before finishing erasing the sector, the systemwaits until the erasing of the sector is finished. If the transfer ofthe data is completed after finishing erasing the sector, the data iswritten upon the end of transfer.

If an error occurs during the writing of the data, the ROM of the sectorconversion unit 261 is rewritten, and a sector 1-A is written into thebackup area C as shown in FIG. 20B (showing the case that an erroroccurred in the sector 1-A). Unless there occurs an error in sectors,the backup area C is not used for writing data.

In this embodiment as described above, a sector is erased when italready has data while data to be written is being transferred to theprimary memory media 231. Thus, the time lag at the time of writing canbe eliminated as in the first embodiment, and a writing speed can beenhanced. Also, since backup areas are provided to substitute fordefective sectors, the development of defective sectors is not aproblem.

(3) Third Embodiment

FIGS. 21A and 21B are block diagrams of a system according to a thirdembodiment. In FIG. 21A, a sector conversion unit 261 includes an EEPROMor other ROM capable of rewrite, e.g., a flash memory. A flash memory 25includes a block 1, a block 2, a backup block1, and a backup block2. Theblocks 1 and 2 are provided with sectors 1-to-3A to 1-to-3D and sectors4-to-6A to 4-to-6D, respectively.

Each of the sectors 1-to-3A, . . . , and 1-to-3D is one sector havingone physical address, and data with a logical address of 1, 2, or 3 canbe written into any of those sectors. That is, the four sectors referredto as A to D are provided as areas into which data with a logicaladdress of 1, 2, or 3 is written. When data is written into thosesectors, a free area among A to D is used.

The sectors 4-to-6A, . . . , and 4-to-6D are the same as above, and afree area among A to D is used for writing data with a logical addressof 4, 5, or 6.

In this embodiment as described above, a memory space is divided intoblocks having n+1 sectors (n=3 in this example) so that there is oneadditional sector in excess of the number of logical addresses.

In FIG. 21A, when writing data with a logical address of 1, the sectors1-to-3A, . . . , and 1-to-3D are examined to find if a sector of thesame logical address already exists. If it does, that sector is erased.Since there is at least one free sector, data is written into a freesector while erasing the above sector.

If an error occurs at the time of writing, one of the backup blocks isused as an alternate block. For example, if the sector 1-to-3A becomesdefective, the backup block 1 is assigned to an alternate block as shownin FIG. 21B. At the same time, the ROM of the sector conversion unit 261is rewritten so as to use the backup block 1 as an alternate for theblock 1 suffering an error.

As far as there is a backup block, the process described above iscarried out. When the backup blocks are used up, all data are evacuatedto an external memory such as the SRAM 23 of FIG. 18, and the ROM of thesector conversion unit 261 is rewritten so as to newly divide the memoryspace into a data space and a backup space. In doing so, sectors areallocated successively in a descending order or an ascending order ofthe address depending on the type of the system with, defective sectorsbeing excluded.

The sector conversion unit 261 is structured for converting a logicaladdress into a physical address in such a way that there are n+1available sectors in one block by making blocks in the unit of n+1sectors.

When some sectors become defective, the conversion table of the sectorconversion unit 261 is rewritten as described above so that there arealways n+1 sectors in one block.

In this embodiment as described above, one block has n+1 sectors, i.e.,n sectors plus one excess sector, and erasing a sector can be done atthe same time as writing data. Thus, the time lag at the time of writingis eliminated to enhance the writing speed. Also, since backup areas areprovided to substitute for defective sectors, the development ofdefective sectors is not a problem.

(4) Fourth Embodiment

FIGS. 22A and 22B are block diagrams of a system according to a fourthembodiment. In FIG. 22A, a sector conversion unit 261 includes an EEPROMor other ROM capable of rewrite, e.g., a flash memory. A flash memory 25includes a block 1, a block 2, and backups 1A to 1D. The blocks 1 and 2are provided with sectors 1-to-3A to 1-to-3D and sectors 4-to-6A to4-to-6D, respectively.

In this embodiment, there are n+1 sectors (n=3 in this example) in oneblock as in the third embodiment so that there is at least one freesector at anytime.

In FIG. 22A, when writing data with a logical address of 1, the sectors1-to-3A, . . . , and 1-to-3D are examined to find if a sector of thesame logical address already exists. If it does, that sector is erased.Since there is at least one free sector, data is written into a freesector while erasing the above sector.

If an error occurs at the time of writing, one of the backups 1A to 1Dis used as an alternate sector. For example, if the sector 1-to-3Abecomes defective, the backup 1A is newly included in the block 1 asshown in FIG. 22B. At the same time, the ROM of the sector conversionunit 261 is rewritten so as to use the backup 1A as an alternate for thesector 1-to-3A. Thus, the backup 1A becomes a sector 1-to-3A whileleaving the backups 1B to 1D for further use.

As far as there is a backup, the process described above is carried out.When the backups are used up, all data are evacuated to an externalmemory such as the SRAM 23 of FIG. 18, and the ROM of the sectorconversion unit 261 is rewritten so that the memory space is newlydivided into a data space and a backup space. In doing so, sectors areallocated successively in a descending order or an ascending order ofthe address depending on the type of the system, with defective sectorsbeing excluded.

The sector conversion unit 261 has an address conversion table forconverting a logical address into a physical address such that there aren+1 sectors available for writing one sector by making blocks in theunit of n+1 sectors. When some sectors become defective, the conversiontable of the sector conversion unit 261 is rewritten so that there arealways n+1 sectors in one block.

In this embodiment as described above, one block has n+1 sectors, i.e.,n sectors plus one excess sector, and erasing a sector can be done atthe same time as writing data. Thus, same as the first, second, andthird embodiments, the time lag at the time of writing is eliminated toenhance a writing speed. Also, since backup areas are provided tosubstitute for defective sectors, the development of defective sectorsis not a problem.

(5) Fifth Embodiment

FIGS. 23A and 23B are block diagrams of a system according to a fifthembodiment. In FIGS. 23A and 23B, which have the same references as doFIGS. 22A and 22B for the same elements, a sector conversion unit 261includes an EEPROM or other ROM capable of rewrite, e.g., a flashmemory. A flash memory 25 includes a block 1, a block 2, a backup block1, and a backup block 2. The blocks 1 and 2 are provided with sectors1-to-3A to 1-to-3D and sectors 4-to-6A to 4-to-6D, respectively.

In this embodiment, there are n+1 sectors (n=3 in this example) in oneblock as in the third embodiment so that there is at least one freesector at anytime.

In FIG. 23A, when writing data with a logical address of 1, the sectors1-to-3A, . . . , and 1-to-3D are examined to find if a sector of thesame logical address already exists. If it does, that sector is erased.Since there is at least one free sector, data is written into a freesector while erasing the above sector.

If an error occurs at the time of writing, one of the backup sectors isused as an alternate sector. For example, if the sector 1-to-3A becomesdefective, the ROM of the sector conversion unit 261 is rewritten so asto use one of the sectors of the backup block 1 as an alternate for thesector 1-to-3A. In doing so, the backup block 1 is assigned to a block nin a memory space. As shown in FIG. 23B, a sector 1, n, mA of the blockn becomes a sector 1, i.e., the sector 1 is included in the block nwhile leaving the sectors 2 and 3 in the block 1.

In other words, a block need not have sectors of successive addresses,and the number of sectors in a block is changed when there is adefective sector.

As long as there is a backup, the process described above is carriedout. When the backups are used up, all data are evacuated to an externalmemory such as the SRAM 23 of FIG. 18, and the ROM of the sectorconversion unit 261 is rewritten so that the memory space is newlydivided into a data space and a backup space. In doing so, sectors areallocated successively in a descending order or an ascending order ofthe address depending on the type of the system with defective sectorsbeing excluded.

In this embodiment, as described above, one block has n+1 sectors, i.e.,n sectors plus one excess sector, and erasing a sector can be done atthe same time as writing data. Thus, same as the first, second, third,and fourth embodiments, the time lag at the time of writing iseliminated to enhance the writing speed. Also, since backup areas areprovided to substitute for defective sectors, the development ofdefective sectors is not a problem.

FIGS. 24A to 24C show a flow chart of a process common in all the aboveembodiments. With reference to FIGS. 24A to 24C, a process of theembodiments shown in FIG. 18 will be described below.

At a step S1, a host computer requests the writing of sector data. At astep S2, the CPU 22 of FIG. 18 recognizes from the message sent by thecontroller LSI 21 that there is a request for the writing of sectordata. Here, it may be instead that the controller LSI 21 interrupts theCPU 22 to send thereto a request for the writing of sector data.

At a step S3, the CPU 22 reads the EEPROM 26, and identifies thedestination address of the sector data. Also, the CPU 22 accesses theflash memories 25-1 to 25-5 to look up management information and thatsort in order to check if there is sector data already written. At astep S5, a check is made whether there is sector data already written,and if there is not, go to a step S8 of FIG. 24B. If there is sectordata already written, the CPU 22 accesses the EEPROM 26 at a step S6 toget data indicating the location of another sector used for writing thesector data. Then, at a step S7, pertinent data in the flash memories iserased (an error check is performed later for a process efficiency), andthe step S8 of FIG. 24B is the next step to proceed.

At a step S8, data is transferred from a host computer to the SRAM 23,and proceeding to the next step waits until the completion of the datatransfer. At a step S9, the CPU 22 sends a message of the writing of thesector data to the controller LSI 21, so that the controller writes thesector data into the flash memories. At a step S10, the CPU 22 receivesa message of the completion of the writing of the sector data from thecontroller LSI 21. At a step S11, a check is made whether an erroroccurred in writing the sector data.

If no error occurred, this is the end of the process. If an erroroccurred, a check is made at a step S12 whether there is an alternatesector. If there is, go to a step S13, where data in the EEPROM 26 isrewritten to change the sector address. Then, go back to the step S9.

If there is no alternate sector, go to a step S14 of FIG. 24C, where acheck is made whether there is a flash memory in the process of beingerased at that moment of time. If there is, go to a step S15, where thesector data, after waiting until the completion of erasing, is writteninto a sector which has been just erased. This is the end of theprocess.

If no flash memories turns out to be in the process of being erased at astep S14, an error message is sent to the host computer at a step S16.

Then, at a step S17, the host computer send a command for transferringdata in the flash memories into another memory storage and rewriting theEEPROM 26. The memory device 20 modifies the EEPROM 26 in response tothe command from the host computer in such a way that more than onesector are available for one logical sector sent from the host computer.By doing this, the memory device 20 can be used again, although it has aless memory volume.

In the above, a process has been described for the case that data istransferred to the SRAM 23 and, then, written into the flash memories.However, it can be instead that data is written directly into the flashmemories without having the SRAM 23 provided (in this case, the steps S8and S9 become one step in the flow chart described above).

E. Enhancement of Reliability of Decoding Unit for Address Conversion

ROMs are sometimes used for storing a conversion table to convert alogical address into a physical address. Although flash EEPROMs,EEPROMs, and the like can be used instead of ROMs, the use of those ROMsis rare because there is usually no need to change the contents of thedecoding unit.

As described above, flash memories by its nature cannot be erased morethan its limiting times so that an address of a sector cannot be usedonce the sector becomes defective. Accordingly, as described in theabove embodiments 1 to 5, flash EEPROMs, EEPROMs, and the like are usedfor a decoding unit for storing a conversion table to convert a logicaladdress into a physical address, so that a conversion table can berewritten to exclude sectors once those sectors become defective.

However, when using flash EEPROMs, EEPROMs, and the like for storing aconversion table, those memories also have a limit in the number oferasures, and defective sectors will develop after erasing thosememories more times than their limit.

For the case that such memories able to be rewritten as flash EEPROMs,EEPROMs, and the like are used for a decoding unit, this embodimentmakes the decoding unit double in order to extend life of the decodingunit and increase its reliability.

FIGS. 25A, 25B, and 25C show block diagrams of a decoding unit accordingto this embodiment. FIG. 25A shows a situation without a defectivesector. FIG. 25B shows a situation with a defective sector. FIG. 25Cshows a situation with the decoding unit having a defect. In FIGS. 25A,25B, and 25C, a first decoding unit is referred to as 301, a seconddecoding unit as 302, and a flash memory as 25.

As shown in FIG. 25A, when a sector 0 of the flash memory 25 isfunctioning, the first decoding unit 301 generates an address of 0000has a decoded address of the sector 0, and the second decoding unit 302generates a physical address of 5555h as a decoded address of 0000h.This physical address indicates the sector 0 in the flash memory 25.

When the sector 0 becomes defective after erasing the flash memory 25more than its limiting times, the physical address of the sector 0 isswitched from 5555h to 8888h. This is shown in FIG. 25B by rewriting thesecond decoding unit 302 and switching a decoded physical address of0000h from 5555h to 8888h.

When the second decoding unit 302 develops a defect therein afterexperiencing rewrite a number of times in the same manner, the firstdecoding unit 301 is rewritten to change a decoded address. That is, asshown in FIG. 25C, the first decoding unit 301 is rewritten to generate2222h as a decoded address which is fed into the second decoding unit302 to generate 8888h. Thus, even if the second decoding unit 302develops a defect, a physical address of 8888h can be generated as adecoded address for the sector 0.

Making a decoding unit double, as described above, can extend life ofthe decoding unit by the power of two by rewriting one of the decodingunits when the other decoding unit develops a defect.

Let the number of erasures for a sector to become defective be L, thenumber of erasures for the second decoding unit to develop a defect beM, and the number of erasures for the first decoding unit to develop adefect be N. Then, the number of erasures for an address error to occuris (N) (M) (L).

In general, a limiting number of erasures for flash EEPROMs is from ahundred thousand times to a million times, and a ten thousand times forEEPROM. In practice, thus, doubling a decoding unit is enough to ensurethe reliability of the decoding unit.

F. Process of Estimating Writing Time

When writing data into flash memories, there is a need for an evacuationprocess and the like so that it takes a longer time to write data thanwhen using conventional semiconductor memories.

In this embodiment, the length of time required for writing data isestimated so that estimation of consumed electric power and detection ofa malfunction can be carried out.

This embodiment will be described by using FIG. 26. FIG. 26 shows amemory in which data of three sectors is about to be written.

The host computer of FIG. 1 first sends to the CPU 22 the number ofsectors to be written, and, then, the CPU 22 determines the length oftime necessary for writing the data. When there are not enough freesectors as in FIG. 26, an evacuation process is carried out, and thenecessary time for writing data can be obtained as follows. ##EQU1##

The CPU 22 calculates the time length necessary for writing data byusing the above equation, and returns the result to the host computer.The host computer calculates electric power W1 consumed during the timeof writing by using t obtained above. W1 can be obtained by ##EQU2##

Also, the host computer reads available electric power W2 from a powersupply, and writes data into the memory.

Furthermore, the host computer checks whether writing data into thememory is taking a longer time than t obtained above. If writing datadoes not finish exceeding t, the host computer concludes that there is amalfunction in the memory device, and notifies the user or takes ameasure such as stopping the writing process.

FIG. 27 shows a flow chart of a process carried out by the host computerin this embodiment. With reference to FIG. 27, this embodiment will bedescribed below.

At a step S1, the size of the data to be written is sent to the memorydevice to obtain the length of time necessary for writing the data.

At a step S2, electric power to be consumed is obtained by multiplyingconsumed electric power per hour with the length of time necessary forwriting. At a step S3, available electric power is compared with theelectric power to be consumed, and, then, if available electric power issmaller, a counter measure is taken. If available electric power islarger, go to a step S4, where data is written into the memory. Then, ata step S5, a check is made whether the actual time length taken to writedata is exceeding the estimate of that time length. If it is exceeding,a counter measure is taken. If it is not exceeding, go to a step S6,where it is checked if the writing process is finished. If it is notfinished, go back to the step S5. If it is finished, this is the end ofthe process.

In this embodiment, as described above, electric power to be consumedduring the time of writing data is estimated by obtaining the length oftime necessary for writing, so that it can be determined whetheravailable electric power is enough to carry out the writing process.Thus, termination of a writing process due to the lack of power supplycan be avoided to enhance the reliability of the system.

Also, a malfunction of the memory device can be detected by comparing anestimate of the length of time necessary for writing data with theactual time length. The time length necessary for writing may bedisplayed to be shown to the user so that the user can decide if thereis a malfunction in the memory device.

G. Enhancement of Reliability of Flag Check Process

Usually, one bit is allocated for one function of one flag, and thestatus of the flag is determined by a value of this one bit. However,the flash memory by its nature has a downside that the flash memorycannot be erased after experiencing excessive erasing. A memory cellsuffering a defect becomes a permanent high level so as to be unable toreturn to a low level.

Accordingly, when one bit which is allocated for one function of oneflag becomes defective, this flag cannot perform its designed role.

This embodiment prepares more than one bit for each of Erase Flag,Defect Flag, Parity Flag, etc. so as to enhance the reliability of theflag.

(1) First Embodiment

FIGS. 28A, 28B, and 28C are illustrations of a first embodiment. FIG.28A shows a flag register, FIG. 28B a logical product circuit forobtaining a flag status, and FIG. 28C a truth table.

In this embodiment, for example, bits b0 and b4 are used for onefunction as shown in FIG. 28A. In order to check a flag status, alogical product of these two flags is obtained as shown in FIG. 28B.

Checking a flag status as described above makes it possible that acorrect result for a flag status is obtained even if the bit b0 is fixedto a high level as shown in FIG. 28C. Similarly, a correct result isobtained when the bit b4 becomes a permanent high level.

(2) Second Embodiment

FIGS. 29A, 29B, and 29C are illustrations of a second embodiment.

FIG. 29A shows a first flag resister, FIG. 29B a second flag register,and FIG. 29C a logical product circuit for obtaining a flag status.

This embodiments assigns to one function a plurality of bits which arestored in different flag registers. For example, a bit b0 of the flagregister of FIG. 29A is used for one function of one flag, and bits b0and b2 of the flag register of FIG. 29B are also used for the samefunction as above.

In order to check a flag status, a logical product of those three flagsis obtained by a logical product circuit of FIG. 29C.

Similarly to the first embodiment, this second embodiment can obtain acorrect result even if some of the flags are fixed to a high level.

In the second embodiment, a check of a flag status is made by using aplurality of bits so that a correct result is obtained unless all thebits become defective. This leads to an enhancement on the reliabilityof a check result.

H. Memory Management Method of Reducing Size of Management Table

This embodiment shows a method that can simplify a management table andcan use each block evenly in a flash memory system whose memory iscomprised of a plurality of chips each with a plurality of blocks.

Also, in this embodiment, a data space in one chip is made smaller thanthe total memory space of the chip, and the remaining space is used forwork blocks and backup blocks for a defective block. The dataarrangement in a block is fixed. When rewriting data which alreadyexists in a block, data in the block is evacuated to the SRAM 23 of FIG.1, and the evacuated data along with the new data is written into a freeblock. The original block with the old data is erased upon thecompletion of writing.

FIG. 30 shows a block diagram of a chip, a block, and a sector accordingto this embodiment. As shown in FIG. 30, the chip is 2 Mbytes which isdivided into 512 blocks No.000 to No.511. Each block is 4 kbytes and isprovided with eight 526 byte sectors No.00 to No.07. Here, a block No.and a sector No. in FIG. 30 indicate a physical address.

As shown in FIG. 30, each sector has a real data area of 256 byte, anECC area for a long instruction, a defective data flag, a defectiveblock flag, a block address, and an ECC area of 256 byte for the realdata area.

The block address stores an address value in a block pointer stored inthe SRAM 23, and the block address is written even when a sector isconcluded not to have real data. By doing this, it can be decided thatone with a larger number of sector addresses is correct data whenputting leads in and out. When sector addresses are the same, it isdecided by a true or false value of the ECC checksum.

The defective block flag shows the condition of the block. FFh means anormal block, and any value other than FFh means a defective block.

The defective data flag shows the condition of the data. FFh meansnormal data, and any value other than FFh means defective data.

The ECC area for a long instruction is 4 byte at the maximum. The ECCarea for the real data area shows the condition of real data, and avalue of this area is used for data correction and error detection.

FIGS. 31A to 31E show a writing process of this embodiment. This exampleof the embodiment shows a method of writing and managing data when thereare five chips ranging from No.00 to No.04 each with four work blocks.

FIG. 31A shows chips with all the blocks erased. As shown in FIG. 31A,each chip has four work blocks Work01 to Work04, into which data iswritten. Although writing can be done by the unit of sector, it isimpossible to write into a sector after writing into a higher sectorlike writing into a sector 004 after writing into a sector 005.

Also, it is impossible for data to be moved across chips, and a sectorarrangement in a block is fixed. When the amount of data written doesnot fill 8 sectors as when sectors 00 to 05 are written into a logicalblock address 00, only the block address is written for the remainingsectors (sectors 06 and 07).

When writing data of a logical address n into a chip, the chip No. ofthe chip to write into is such integer k as in n=(8)((5)m+k)+l, where k,l, m, and n are all integers with K<5 and l<8. For example, when n isequal to 121, 121 is (8)((5)(3)+0)+1 so that k is equal to 0. Thus, dataof a logical address 121 is written into the chip of No.0.

The writing process of this embodiment is as follows. When forty ofsectors No.000 to No.039 (logical address) are written into the chipswhose blocks are all erased as in FIG. 31A, the result is that Work01 ofeach chip contains the data as shown in FIG. 31B.

First, data is sent from the host computer to the SRAM 23. Since thesectors No.000 to 007 have logical block address 0, writing data startsfrom Work01 of the chip No.00, which Work01 is indicated by the writepointer. Here, logical block addresses are managed independently fromchip to chip.

In this case, logical block address 00 does not exist prior to writing,Work01 of the chip No.00 is moved to a free block next to Work04.

When finishing writing 8 sectors, the write pointer is moved to indicatewok01 of the chip No.01. Then, the sectors No.008 to No.015 are writteninto Work01 of the chip No.01.

When the chip No.04 is finished to be written, the write pointer ismoved to indicate Work02 of the chip No.00.

Then, the sectors No.120 to 191 (logical address) are written as shownin FIG. 31C.

First, data is sent from the host computer to the SRAM 23. Since thesector No.120 to 127 has logical block address 03, writing data startsfrom Work02 of the chip No.00, which is indicated by the write pointer.In the same manner as above, Work02 of the chip No.00 is moved to a freeblock next to Work01.

Then, the sectors No.128 to 191 are written into the chips No.00 toNo.04 in the same manner as above.

FIG. 31D shows a result of writing the sector No.002 and 003 again intothe memory shown in FIG. 31C.

First, data of the sector No.002 and 003 is sent to the SRAM 23. Sincethe sectors No.002 and No.003 have logical block address 00 already inexistence, evacuation of old data is necessary. Since the sectors No.002and 003 cannot be written into the first two sectors of logical blockaddress 00, data of the old logical block address 00 is evacuated to theSRAM 23.

If data to be written corresponds to the first two sectors of a logicalblock address, the data is first written into a free block, and, then,data of the old logical block address is evacuated to be moved to thefree block.

In this case, the old data 000, 001, 004, 005, 006, and 007 areevacuated to the SRAM 23, and, then, the new data 002 and 003 and theold data 000, 001, 004, 005, 006, and 007 are written into Work04 of thechip No.00 which is indicated by the write pointer. Writing order is000, 001, 002, 003, 004, 005, 006, and 007.

Then, the old logical block 00 is erased, and Work4 is allocated to theold logical block 00 as shown in FIG. 31D.

Suppose that after writing two sectors as described above, power isturned off, and, then, turned on. The result is shown in FIG. 31E, wherework blocks are allocated to blocks following the blocks in use. Whenallocating work blocks as in the above, if all the work blocks cannot beallocated after searching for free blocks by starting from a blockfollowing the block currently in use, a search for free blocks is madeagain by starting from the first block.

In the above process, if an error occurs at the time of erasing, thedefective data flag is set to 00h so that the block is not used forreading or writing any more. That is, a counter measure in this case isto eliminate one work block. If there is no more work block, then thesystem becomes unable to write.

If an error occurs at the time of evacuating data, the defective blockflag is put up, and, then, the data is written. Even if an error occursat the time of reading a block, this block is treated as a defectiveblock.

If an error occurs at the time of writing, the block is marked as adefective block. Data written in the block is evacuated, and defectiveblock flags are put up. As in the case of writing data, defective blockflags are put up for all the sectors of the block.

If an error occurs at the time of erasing, the block is marked as adefective block. In this case, not only defective block flags are setbut also all areas including real data are change to 0 in the block.This process is applied to all the sectors of the block.

As described above, a chip which is used for writing is always the samechip for a given data, and data is written into blocks by shifting adesignated block within the chip. Thus, data management is localizedwithin a chip so that there is no need for a centralized managementsystem to take care of all the memory space. This means that the size ofa management table can be reduced and a writing speed can be increased.

Also, in this embodiment, data is written into a work block which ismoved within a chip, so that each block can be used evenly.

Further, the present invention is not limited to these embodiments, butvarious variations and modifications may be made without departing fromthe scope of the present invention.

What is claimed is:
 1. A method of writing and erasing data in a memorydevice with a memory area having a plurality of blocks each of saidblocks having a plurality of sectors, said memory device erasing data bya unit of one block, writing data to said memory area by a unit of onesector once after erasing and invalidating erasable data of said memoryarea, said method comprising steps of:assigning a main area to ones ofsaid blocks of said memory area; assigning a backup area to at least oneblock of said memory area other than said main area; selecting a blockfrom said main area; evacuating necessary data in the selected block tosaid backup area; erasing data in the selected block; and moving saidnecessary data in said backup area to said main area excluding theselected block.
 2. The method as claimed in claim 1, wherein saidpredetermined order is a descending order of a number of sectorscontaining necessary data in one of said blocks.
 3. The method asclaimed in claim 2, wherein the blocks of said main area are arrangedsequentially and said step of moving said necessary data moves saidnecessary data in said backup area to said main area by searching for afree sector from a block arranged immediately after the selected blockin a data writing direction.
 4. The method as claimed in claim 1,wherein the blocks of said main area are arranged sequentially and saidstep of moving said necessary data moves said necessary data in saidbackup area to said main area by searching for a free sector from ablock arranged immediately after the selected block in a data writingdirection.
 5. The method as claimed in claim 1, further comprising astep of detecting lack of free sectors in an attempt to write data,which is performed before said step of evacuating necessary data.
 6. Themethod as claimed in claim 1, further comprising a step of determiningthat a process of said steps is terminated during said step of movingsaid necessary data, when there is erasable data in said backup areaafter resuming said steps once terminated.
 7. The method as claimed inclaim 1, further comprising a step of determining that a process of saidsteps is terminated during said step of erasing data, when there is dataand no erasable data in said backup area after resuming said steps onceterminated.
 8. The method as claimed in claim 1, further comprising astep of reconstructing an arrangement of said sectors by rewriting adecode table for managing said sectors when said backup area becomesunusable.
 9. A method of writing and erasing data in a memory devicewith a memory area having a plurality of blocks, each of said blockshaving a plurality of sectors, said memory device erasing data by a unitof one block, writing data to said memory area by a unit of one sectoronce after erasing and invalidating erasable data of said memory area,said method comprising the steps of:assigning a main area to at leasttwo blocks of said memory area; assigning a backup area to one blockother than said main area; assigning an evacuation area to a blockselected from said main area; moving necessary data in said evacuationarea to said backup area; erasing data in said evacuation area; movingnecessary data in said backup area to said main area other than saidevacuation area; and erasing data in said backup area.
 10. The method asclaimed in claim 9, wherein the blocks of said main area are arrangedsequentially and said step of moving said necessary data moves saidnecessary data in said backup area to said main area by searching for afree sector from a block arranged immediately after the selected blockin a data writing direction.
 11. A method of writing and erasing data ina memory device with a memory area having a plurality of blocks, each ofsaid blocks having a plurality of sectors, said memory device erasingdata by a unit of one block and writing data to said memory area by aunit of one sector once after erasing and invalidating erasable data ofsaid memory area, said method comprising steps of:assigning a main areato at least two blocks of said memory area; assigning a backup area toone block other than said main area; assigning an evacuation area to ablock selected from said main area; detecting said evacuation area beingdefective; reassigning said evacuation area to the other block of saidmain area; moving necessary data in said evacuation area to said backuparea; erasing data in said evacuation area; moving necessary data insaid backup area to said main area other than said evacuation area; anderasing data in said backup area.
 12. The method as claimed in claim 11,wherein the blocks of said main area are arranged sequentially and saidstep of moving said necessary data moves said necessary data in saidbackup area to said main area by searching for a free sector from ablock arranged immediately after the selected block in a data writingdirection.
 13. A method of writing and erasing data in a memory devicehaving a memory area including a plurality of blocks, a main areaassigned to ones of said blocks of said memory area and a backup areaassigned to at least one block of said memory area other than said mainarea, each of said blocks having a plurality of sectors, said memorydevice erasing data by a unit of one block and writing data by a unit ofone sector, said method comprising the steps of:assigning a block ofsaid memory area as an evacuation area and assigning blocks of saidmemory area other than said evacuation area as writing area; evacuatingnecessary data in a desired block of said writing area to saidevacuation area; reassigning said evacuation area as a writing area;erasing data in said desired block; and reassigning said desired blockas a new evacuation area.
 14. The method as claimed in claim 13, furthercomprising steps of:detecting said evacuation area being defective;reassigning said evacuation area to the other block of said writingarea; moving necessary data in said evacuation area to said backup area;erasing data in said evacuation area; moving necessary data in saidbackup area to said main area other than said evacuation area; anderasing data in said backup area.
 15. The method as claimed in claim 14,wherein the blocks of said main area are arranged sequentially and saidstep of moving said necessary data moves said necessary data in saidbackup area to said main area by searching for a free sector from ablock arranged immediately after the selected block in a data writingdirection.
 16. A memory controller for controlling a memory devicehaving a memory area including a plurality of blocks, a main areaassigned to ones of said blocks of said memory area and a backup areaassigned to at least one block of said memory area other than said mainarea, each of said blocks having a plurality of sectors, said memorycontroller comprising:evacuating means for evacuating necessary data ina selected block of said main area to said backup area; erasing meansfor erasing data in the selected block by a unit of one block; andmoving means for moving said necessary data in said backup area to saidmain area excluding the selected block.
 17. The memory controller asclaimed in claim 16, wherein the blocks of said main area are arrangedsequentially and said moving means moves said necessary data in saidbackup area to said main area by searching for a free sector from ablock arranged immediately after the selected block in a data writingdirection.
 18. The memory controller as claimed in claim 16, whereinsaid memory device is a flash memory device.
 19. A memory devicecomprising:a memory area having a plurality of blocks, each of saidblocks having a plurality of sectors; a main area assigned to ones ofsaid blocks of said memory area; a backup area assigned to at least oneblock of said memory area other than said main area; evacuating meansfor evacuating necessary data in a selected block of said main area tosaid backup area; erasing means for erasing data in the selected blockby a unit of one block; and moving means for moving said necessary datain said backup area to said main area excluding the selected block. 20.The memory device claim in claim 19, wherein the blocks of said mainarea are arranged sequentially and said moving means moves saidnecessary data in said backup area to said main area by searching for afree sector form a block arranged immediately after the selected blockin a data writing direction.
 21. The memory device as claimed in claim19, wherein said memory device is a flash memory device.
 22. A memorycontroller for controlling a memory device having a memory areaincluding a plurality of blocks, a main area assigned to ones of saidblocks of said memory area and a backup area assigned to at least oneblock of said memory area other than said main area, each of said blockshaving a plurality of sectors, said controller comprising:assigningmeans for assigning a block of said main area as an evacuation area andfor assigning blocks of said main area other than said evacuation areaas a writing area; writing means for writing data to said writing areaby a unit of one sector; evacuating means for evacuating necessary datain a desired block of said writing area to said evacuation area; erasingmeans for erasing data in said desired block by a unit of one block; andreassigning means for reassigning said evacuation area to which saidnecessary data is evacuated as a writing area and for reassigning saiddesired block as a new evacuation area.
 23. The memory controller asclaimed in claim 22, wherein said evacuation means evacuates data insaid desired block to said backup area when said evacuation area isdefective.
 24. The memory controller as claimed in claim 23, furthercomprising moving means for moving said necessary data in said backuparea to said writing area.
 25. The memory controller as claimed in claim24, wherein the blocks of said main area are arranged sequentially andsaid moving means moves said necessary data to said writing area bysearching a free sector from a block arranged immediately after saiddesired block in a data writing direction.
 26. A memory devicecomprising:a memory area including a plurality of blocks each of saidblocks having a plurality of sectors; a main area assigned to ones ofsaid blocks of said memory area; a backup area assigned to at least oneblock of said memory area other than said main area; assigning means forassigning a block of said memory area as an evacuation area and forassigning blocks of said memory area other than said evacuation area aswriting area; writing means for writing data to said writing area by aunit of one sector; evacuating means for evacuating necessary data in adesired block of said writing area to said evacuation area; erasingmeans for erasing data in said desired block by a unit of one block; andreassigning means for reassigning said evacuation area to which saidnecessary data is evacuated as a writing area and for reassigning saiddesired block as a new evacuation area.
 27. The memory device as claimedin claim 26, wherein said evacuation means evacuates data in saiddesired block to said backup area when said evacuation area isdefective.
 28. The memory device as claimed in claim 27, furthercomprising moving means for moving said necessary data in said backuparea to said writing area.
 29. The memory device as claimed in claim 28,wherein the blocks of said main area are sequentially and said movingmeans moves said necessary data to said writing area by searching a freesector from a block arranged immediately after said desired block in adata writing direction.